idw 7 5 e60 ifag ipc td vls 1 rev. 2.2 20.09.2013 fast switching emitter controlled diode f e a t u r e s : ? 6 0 0 v e m co n te c h n o l o g y ? f a s t r e c o v e r y ? s o f t s wi tc h i n g ? l o w r e v e r s e r e c o v e r y c h a r g e ? l o w f o r wa r d v o l ta g e ? 1 7 5 c j u n c ti o n o p e r a t i n g te m p e r a tu r e ? e a s y p a r a l l e l i n g ? p b - f r e e l e a d p l a ti n g ; r o hs c o m p l i a n t ? complete product spectrum and pspice models: http://www.infineon.com/emcon/ a p p li c a t io n s : ? w e l d i n g ? motor drives type v rrm i f v f ,tj=25c t j,max marking package idw75e60 600v 75a 1.65v 175 ? c D75E60 pg-to247-3 m a x im u m ra t in g s parameter symbol value unit repetitive peak reverse voltage v r r m 600 v co n t i n u o u s f o r wa r d c u r r e n t t c = 2 5 ? c t c = 9 0 ? c t c = 1 0 0 ? c i f 1 2 0 8 2 7 5 a s u r g e n o n r e p e ti t i v e f o r w a r d c u r r e n t t c = 2 5 ? c, t p = 1 0 m s , s i n e h a l f w a v e i f s m 220 a m a x i m u m r e p e ti ti v e f o r w a r d c u r r e n t t c = 2 5 ? c, t p l i m i te d b y t j ,ma x , d = 0 .5 i f r m 225 a p o w e r d i s s i p a ti o n t c = 2 5 ? c t c = 9 0 ? c t c = 1 0 0 ? c p t o t 3 0 0 1 7 0 1 5 0 w o p e r a ti n g j u n c t i o n te m p e r a tu r e t j - 4 0 ?+ 1 7 5 c storage temperature t s t g -55...+150 s o l d e r i n g t e m p e r a tu r e 1.6mm (0.063 in.) from case for 10 s t s 2 6 0 pg-to247-3 http://
idw75e60 ifag ipc td vls 2 rev. 2.2 20.09.2013 thermal resistance parameter symbol conditions max. value unit characteristic thermal resistance, junction ? case r t h j c 0.5 k/w thermal resistance, junction ? ambient r t h j a 40 electrical characteristic, at t j = 25 ? c, unless otherwise specified parameter symbol conditions value unit min. typ. max. static characteristic collector-emitter breakdown voltage v r r m i r = 0 . 2 5 m a 6 0 0 - - v diode forward voltage v f i f = 75 a t j =2 5 ? c t j =1 7 5 ? c - - 1.65 1.65 2.0 - reverse leakage current i r v r = 6 00 v t j =2 5 ? c t j =1 7 5 ? c - - - - 40 2500 ? a dynamic electrical characteristics diode reverse recovery time t r r t j =2 5 ? c v r = 4 00 v , i f = 7 5 a, di f / dt = 1 46 0 a/ s - 1 2 1 - ns diode reverse recovery charge q r r - 2 .4 - c diode peak reverse recovery current i r r - 3 8 .5 - a diode peak rate of fall of reverse recovery current during t b di r r / d t - 9 2 1 - a/s diode reverse recovery time t r r t j =1 2 5 ? c v r = 4 00 v , i f = 7 5 a, di f / dt = 1 46 0 a/ s - 1 5 5 - ns diode reverse recovery charge q r r m - 4 .4 - c diode peak reverse recovery current i r r - 4 6 .6 - a diode peak rate of fall of reverse recovery current during t b di r r / d t - 9 6 0 - a/s diode reverse recovery time t r r t j =1 7 5 ? c v r = 4 00 v , i f = 7 5 a, di f / dt = 1 46 0 a/ s - 1 8 2 - ns diode reverse recovery charge q r r m - 5 .8 - c diode peak reverse recovery current i r r - 5 6 .2 - a diode peak rate of fall of reverse recovery current during t b di r r / d t - 1 0 1 3 - a/s
idw75e60 ifag ipc td vls 3 rev. 2.2 20.09.2013 p t o t , p o w e r d i s s i p a t i o n 2 5 c 5 0 c 7 5 c 1 0 0 c 1 2 5 c 1 5 0 c 0 w 5 0 w 1 0 0 w 1 5 0 w 2 0 0 w 2 5 0 w 3 0 0 w i f , f o r w a r d c u r r e n t 25 c 7 5 c 1 2 5 c 0a 3 0 a 60a 90a 120 a t c , case temperature t c , case temperature f ig ure 1 . power dissipation as a function of case temperature ( t j ? 175 ? c) f ig ure 2 . diode forward current as a function of case temperature ( t j ? 175 ? c) i f , f o r w a r d c u r r e n t 0v 1v 2 v 0a 50a 10 0 a 1 5 0 a 2 0 0 a 1 7 5 c t j =25 c v f , f o r w a r d v o l t a g e 0c 50c 1 0 0 c 1 5 0 c 0.0v 0.5 v 1.0 v 1.5 v 2.0 v 75a i f = 150a 3 7.5a v f , f o r ward voltage t j , junction temperature f igure 3 . typical diode forward current as a function of forward voltage figure 4 . typical diode forward voltage as a function of junction temperature
idw75e60 ifag ipc td vls 4 rev. 2.2 20.09.2013 t r r , r e v e r s e r e c o v e r y t i m e 100 0 a / s 1 5 0 0 a / s 0ns 50n s 100 n s 150 n s 200 n s t j = 2 5c t j = 1 7 5 c q r r , r e v e r s e r e c o v e r y c h a r g e 1000a/ s 1 5 0 0 a / s 0c 1c 2c 3c 4c 5c t j = 2 5 c t j =175 c di f /dt , diode current slope di f /dt , diode current slope figure 5 . typical reverse recovery time as a function of diode current slope ( v r =400v, i f =75a, d y n a m ic test circuit in figure e) figure 6 . typical reverse recovery charge as a function of diode current slope ( v r = 4 00v, i f = 75a, d y n a m ic test circuit in figure e) i r r , r e v e r s e r e c o v e r y c u r r e n t 1000a/s 1 5 0 0 a / s 0a 10a 20a 30 a 40 a 50 a 60 a t j =25 c t j =175c d i r r / d t , d i o d e p e a k r a t e o f f a l l o f r e v e r s e r e c o v e r y c u r r e n t 1000a/s 1500a/s 0a/s -200a/s -40 0 a / s -600a/s -800a/s -1000a/ s -1200a/ s t j =25c t j =175c d i f /dt , di o d e c u r r e n t s l o p e di f /dt , diode current slope figure 7 . t y p ic a l r e verse recovery current as a function of diode current slope ( v r = 400v, i f = 75a, d y n a m i c te s t c i r c u it in figure e) figure 8 . t y p ic a l d io de peak rate of fall of r e v e r s e r e c o v e r y current as a function of diode current slope ( v r =400v, i f =75a, d y n a m i c te s t c i r c u it in figure e)
idw75e60 ifag ipc td vls 5 rev. 2.2 20.09.2013 z t h jc , t r a n s i e n t t h e r m a l i m p e d a n c e 1s 1 0 s 100s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w s i n gle pulse 0.01 0.02 0.05 0.1 0 . 2 d =0. 5 t p , pulse width figure 9 . diode transient thermal im p e dance as a function of pulse width ( d = t p / t ) r , ( k / w ) ? , ( s ) ? ? 0 .05 5 6 0 . 1 4 9 5 0 . 1 757 0.02797 0 . 1 2374 3.623 e-3 0 . 1 2192 3.276 e-4 0.0 2305 2.635 e - 5 c 1 = ? 1 / r 1 r 1 r 2 c 2 = ? 2 / r 2
idw75e60 ifag ipc td vls 6 rev. 2.2 20.09.2013
idw75e60 ifag ipc td vls 7 rev. 2.2 20.09.2013 published by infineon technologies ag 81726 munich, germany ? 2013 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ) . warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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